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Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and
markets industry-leading embedded memory IP for semiconductors. MoSys' patented
1T-SRAM(R) and 1T-FLASH(R) technologies offer a combination of high density, low
power consumption, high speed and low cost that is unmatched by other memory
technologies. MoSys licensees have shipped more than 100 million chips
incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range
of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available at
http://www.mosys.com.
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| Squeak!
- SSD Myths and Legends - "write endurance" |
| Does the
fatal gene of "write endurance" built into
flash
solid state
disks prevent their deployment in intensive server acceleration
applications - such as RAID
systems? |
It was
certainly true as little as a few years ago.
What's the risk with
today's devices?
This article looks at the current generation of
products and calculates how much (or how little) you should be worried. |
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| RAM based SSDs have been
used alongside RAID for years - but flash SSDs are physically smaller and have
bigger capacity (160G in 2.5") and are lower cost than RAM-SSDs and could
actually be configured in standard RAID boxes. F-SSDs aren't as fast as RAM
based products but a single flash SSD can deliver 20,000 IOPs - which when
scaled up in an array - starts to look interesting. ...read the article,
storage reliability
solid state disks | |